r.3.a.992605-heric ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) descri bed herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting t he factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 MDS350L 350 watts, 45 volts, pulsed avionics 1030 - 1090 mhz advanced issue general description the MDS350L is a high power common base bipolar transistor. it is designed for pulsed systems in the frequency band 1030 - 1090 mhz. the transistor includes input and output prematch for broadband performance. the device has gold thin-film metallization and diffused ballasting for proven highest mttf. low thermal resistance solder sealed package reduces junction temperature, extends life. case outline 55kt style 1 absolute maximum ratings maximum power dissipation device dissipation @25 c 583 w maximum voltage and current collector to base voltage (bv ces )55v emitter to base voltage (bv ebo )3.5 v collector current (i c )30a maximum temperatures storage temperature -65 to +200 c operating junction temperature +200 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units p out power out f = 1090 mhz 350 w p in power input vcc = 45 volts 55 w p g power gain pw = note 1 8 db c collector efficiency df = note 1 47 % vswr load mismatch tolerance f = 1030 mhz 2:1 functional characteristics @ 25 c bv ebo emitter to base breakdown ie = 50 ma 3.5 v bv ces collector to emitter breakdown ic = 100 ma 55 v h fe dc ? current gain vce = 5v, ic = 2a 20 jc 2 thermal resistance 0.3 c/w note 1: 250 s at 10% duty 2. at rated pulse conditions . initial issue may 1999
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